Steffen Beushausen und Jakob Teichrib nehmen an der Konferenz IEEE EPE’19 ECCE Europe in Genua, Italien, teil.


Steffen Beushausen und Jakob Teichrib präsentieren ihre jeweiligen Beiträge über “GaN-Based Active Gate-Drive Unit for IGBTs in Medium-Voltage Applications” und “The ETO-IGBT – A Dual-Concept of Thyristor and Transistor Power Devices” bei der Konferenz 2019 IEEE EPE’19 ECCE Europe in Genua, Italien. Im Folgenden sind die Zusammenfassungen der Veröffentlichungen gegeben. Leider liegen diese nur auf Englisch vor, was wir zu entschuldigen bitten.


GaN-Based Active Gate-Drive Unit for IGBTs in Medium-Voltage Applications

In this work, the concept and experimental verification of a GaN-based active gate-drive unit to control the switching transients of medium-voltage (MV) IGBTs are presented. The driving stage consists of a half-bridge with GaN HEMTs operated at switching frequencies between 20 and 30 MHz. Using the GaN half-bridge as a buck converter, the gate voltage of MV-IGBTs can be set dynamically during the switching transients. With an adjustable gate voltage during the switching transients, the current and voltage slopes of the IGBT can be manipulated. Optimizing the current slope during turn-on can significantly reduce the turn-on loss, while still maintaining the same reverse recovery of an anti-parallel diode compared to a conventional gate-drive unit. For the experimental verification of the active gatedrive unit presented in this work, an improved turn-on with a switching loss reduction of up to 20% is achieved.


The ETO-IGBT – A Dual-Concept of Thyristor and Transistor Power Devices

The performance of inverters strongly depends on the characteristics of the employed semiconductor devices. Bound to a trade-off between conduction- and switching-optimization, these devices require a decision for the optimal loss balance. In this work, a new medium-voltage semiconductor device consisting of both thyristor-based and transistor-based components is proposed. The goal is reduction of losses in both conduction and switching domain. The circuitry and switching pattern is described and the improvement of overall losses is investigated by FEM-simulation to give an theoretical outlook on the benefits of the device. A selection of parameters is adapted to analyze the impact on the performance. It is shown that the overall losses can be significantly reduced by minor substitution of Gate-Commutated Thyristor (GCT) silicon area with that of Insulated-Gate Bipolar Transistor (IGBT).